Analytical model of subthreshold drain current characteristics of ballistic silicon nanowire transistors

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Original languageEnglish
Article number605987
Journal / PublicationAdvances in Condensed Matter Physics
Volume2015
Publication statusPublished - 2015

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  • This full text is made available under CC-BY 3.0. https://creativecommons.org/licenses/by/3.0/
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-84934927778&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(a01c31e8-5a0b-44b6-9bd2-71172008373c).html

Abstract

A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

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100
Poisson Equation Mathematics
100
Potential Distribut... Mathematics
100
Current Model Mathematics
100
Analytical Model Engineering
100
Current Drain Engineering
100
Nanowire Engineering
100
Silicon Material Science
100
Transistor Material Science
50
Electric Potential Engineering
50
Subthreshold Slope Engineering
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Citation Format(s)

[ RIS ] [ BibTeX ]
Analytical model of subthreshold drain current characteristics of ballistic silicon nanowire transistors. / Xu, Wanjie; Wong, Hei; Iwai, Hiroshi.
In: Advances in Condensed Matter Physics, Vol. 2015, 605987, 2015.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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