Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
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Author(s)

  • Yabin Sun
  • Ziyu Liu
  • Xiaojin Li
  • Jiaqi Ren
  • Fanglin Zheng
  • And 1 others
  • Yanling Shi

Detail(s)

Original languageEnglish
Article number275104
Journal / PublicationJournal of Physics D: Applied Physics
Volume51
Issue number27
Online published19 Jun 2018
Publication statusPublished - 11 Jul 2018

Abstract

In this paper, we present an analytical closed model for the gate to source/drain fringing capacitance (Cf) of nanoscale metal oxide semiconductor field effect transistors (MOSFETs), with the consideration of layout dependent effects and process fluctuations. A kind of field-poly structure on shallow trench isolation (STI) is used to separate Cf from other gate-around parasitic capacitances. A significant layout-dependent-effect is found in Cf for the case with high contact density. Based on the device structure, Cf is divided and analytically modeled by three dual-k perpendicular-plate capacitances. The effects of gate to contact space (CPS), contact to contact space (CCS) and the process variations, such as the over-etching of source/drain contact, are taken into account. The proposed model is validated on 40 nm MOSFETs, with a series of layout parameters, and good agreement is obtained between the modeled and measured data over a large range of CPS and CCS. The proposed model can improve the precision for digital and RF circuit simulation in sub-nanometer technology generation.

Research Area(s)

  • fringing capacitance, layout-dependent effect, MOSFET, process variation

Citation Format(s)

Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations. / Sun, Yabin; Liu, Ziyu; Li, Xiaojin; Ren, Jiaqi; Zheng, Fanglin; Shi, Yanling.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 27, 275104, 11.07.2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review