Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

Yonghao Jia; Yuehang Xu; Zhang Wen; Yunqiu Wu; Yongxin Guo

doi:10.1109/TED.2018.2881255

Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

Yonghao Jia
, Yuehang Xu^*
, Zhang Wen
, Yunqiu Wu
, Yongxin Guo

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

34 Citations (Scopus)

Abstract

In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully considered for high-voltage GaN devices. The depletion regions are bias-dependent to implement the capacitance models into the large-signal compact model. A transfer function is proposed to characterize the switching behavior of the capacitances between on- and off-states, which is essential to describe all the states of a device, for example, operating at Class-B. Different from previous works, the current saturation phenomenon is taken into account in determining the intrinsic capacitances which are induced by nonstatic channel charge. The capacitance models can be easily implemented into the virtual-source-based model to accurately predict the S-parameters and large-signal output characteristics. © 1963-2012 IEEE.

Original language	English
Article number	8556100
Pages (from-to)	357-363
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2881255
Publication status	Published - 1 Jan 2019
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

2-D electron gas (2DEG)-electrode fringing capacitances
AlGaN/GaN high-electron mobility transistors (HEMTs)
intrinsic capacitances
large-signal compact model

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title = "Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs",

abstract = "In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully considered for high-voltage GaN devices. The depletion regions are bias-dependent to implement the capacitance models into the large-signal compact model. A transfer function is proposed to characterize the switching behavior of the capacitances between on- and off-states, which is essential to describe all the states of a device, for example, operating at Class-B. Different from previous works, the current saturation phenomenon is taken into account in determining the intrinsic capacitances which are induced by nonstatic channel charge. The capacitance models can be easily implemented into the virtual-source-based model to accurately predict the S-parameters and large-signal output characteristics. {\textcopyright} 1963-2012 IEEE.",

keywords = "2-D electron gas (2DEG)-electrode fringing capacitances, AlGaN/GaN high-electron mobility transistors (HEMTs), intrinsic capacitances, large-signal compact model",

author = "Yonghao Jia and Yuehang Xu and Zhang Wen and Yunqiu Wu and Yongxin Guo",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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AU - Jia, Yonghao

AU - Xu, Yuehang

AU - Wen, Zhang

AU - Wu, Yunqiu

AU - Guo, Yongxin

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully considered for high-voltage GaN devices. The depletion regions are bias-dependent to implement the capacitance models into the large-signal compact model. A transfer function is proposed to characterize the switching behavior of the capacitances between on- and off-states, which is essential to describe all the states of a device, for example, operating at Class-B. Different from previous works, the current saturation phenomenon is taken into account in determining the intrinsic capacitances which are induced by nonstatic channel charge. The capacitance models can be easily implemented into the virtual-source-based model to accurately predict the S-parameters and large-signal output characteristics. © 1963-2012 IEEE.

AB - In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully considered for high-voltage GaN devices. The depletion regions are bias-dependent to implement the capacitance models into the large-signal compact model. A transfer function is proposed to characterize the switching behavior of the capacitances between on- and off-states, which is essential to describe all the states of a device, for example, operating at Class-B. Different from previous works, the current saturation phenomenon is taken into account in determining the intrinsic capacitances which are induced by nonstatic channel charge. The capacitance models can be easily implemented into the virtual-source-based model to accurately predict the S-parameters and large-signal output characteristics. © 1963-2012 IEEE.

KW - 2-D electron gas (2DEG)-electrode fringing capacitances

KW - AlGaN/GaN high-electron mobility transistors (HEMTs)

KW - intrinsic capacitances

KW - large-signal compact model

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DO - 10.1109/TED.2018.2881255

M3 - RGC 21 - Publication in refereed journal

SN - 0018-9383

VL - 66

SP - 357

EP - 363

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 8556100

ER -

Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

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Research Keywords

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