Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications

Michael C Y Chan; K. S. Chan; E. Herbert Li

doi:10.1557/proc-450-389

Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Overview

View graph of relations

Author(s)

Michael C Y Chan
K. S. Chan
E. Herbert Li

Related Research Unit(s)

City University of Hong Kong

Detail(s)

Original language	English
Pages (from-to)	389-394
Journal / Publication	Materials Research Society Symposium - Proceedings
Volume	450
Publication status	Published - 1997

Conference

Title	1996 MRS Fall Meeting
City	Boston, MA, USA
Period	2 - 5 December 1996

Link(s)

DOI	DOI https://doi.org/10.1557/proc-450-389 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0030674150&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(ccd48812-33c3-4f01-bd8a-a8248eb1a11d).html

Abstract

The optical properties of In_0.53Ga_0.47As/InP single quantum well (QW) (with an as-grown well width of 60 angstroms structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of InGaAs/InP QW structures is complicated as interdiffusion can occur for either (i) only group-III (In,Ga), (ii) group-V (As,P), or (iii) both group-III and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3 μm to 1.55 μm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers.