Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Original languageEnglish
Pages (from-to)389-394
Journal / PublicationMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997


Title1996 MRS Fall Meeting
CityBoston, MA, USA
Period2 - 5 December 1996


The optical properties of In0.53Ga0.47As/InP single quantum well (QW) (with an as-grown well width of 60 angstroms structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of InGaAs/InP QW structures is complicated as interdiffusion can occur for either (i) only group-III (In,Ga), (ii) group-V (As,P), or (iii) both group-III and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3 μm to 1.55 μm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers.