Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

W. Hu; Florence Y.M. Chan; D. P. Webb; Y. C. Chan; Y. W. Lam

doi:10.1007/BF02657162

Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

W. Hu
, Florence Y.M. Chan
, D. P. Webb
, Y. C. Chan
, Y. W. Lam

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ

Original language	English
Pages (from-to)	1837-1840
Journal	Journal of Electronic Materials
Volume	25
Issue number	12
DOIs	https://doi.org/10.1007/BF02657162
Publication status	Published - Dec 1996

Research Keywords

Absorption
hydrogenated amorphous silicon
inhomogeneity
optical band gap
plasma enhanced chemical vapor deposition (PECVD)
transmission

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10.1007/BF02657162

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title = "Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD",

abstract = "The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ",

keywords = "Absorption, hydrogenated amorphous silicon, inhomogeneity, optical band gap, plasma enhanced chemical vapor deposition (PECVD), transmission",

author = "W. Hu and Chan, \{Florence Y.M.\} and Webb, \{D. P.\} and Chan, \{Y. C.\} and Lam, \{Y. W.\}",

year = "1996",

month = dec,

doi = "10.1007/BF02657162",

language = "English",

volume = "25",

pages = "1837--1840",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

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TY - JOUR

T1 - Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

AU - Hu, W.

AU - Chan, Florence Y.M.

AU - Webb, D. P.

AU - Chan, Y. C.

AU - Lam, Y. W.

PY - 1996/12

Y1 - 1996/12

N2 - The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ

AB - The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ

KW - Absorption

KW - hydrogenated amorphous silicon

KW - inhomogeneity

KW - optical band gap

KW - plasma enhanced chemical vapor deposition (PECVD)

KW - transmission

UR - https://www.scopus.com/pages/publications/0030418863

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030418863&origin=recordpage

U2 - 10.1007/BF02657162

DO - 10.1007/BF02657162

M3 - RGC 21 - Publication in refereed journal

SN - 0361-5235

VL - 25

SP - 1837

EP - 1840

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

Abstract

Research Keywords

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