Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Original languageEnglish
Pages (from-to)1305-1307
Journal / PublicationApplied Physics Letters
Volume58
Issue number12
Publication statusPublished - 1991
Externally publishedYes

Abstract

Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of 510°C. The segregation effect was found to be suppressed when the As 4 overpressure was doubled. Ion channeling measurements are capable of differentiating the coherency of the strained InGaAs layer in the samples studied. A correlation was found between the coherency of the layer and its electrical transport property.

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