Analysis of marker motion in thin-film silicide formation

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)3379-3382
Journal / PublicationJournal of Applied Physics
Volume48
Issue number8
Publication statusPublished - 1977
Externally publishedYes

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0017525841&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(fc788f3c-39b3-4aee-89bf-935e6f0afd6b).html

Abstract

A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni2Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni2Si at 325 °C have been determined; DNi=1.7×10-14 cm2/sec and DSi=0.6×10-14 cm2/sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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Publication fingerprints text

100
Thin Films Material Science
100
Silicide Material Science
50
Diffusivity Material Science
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Citation Format(s)

[ RIS ] [ BibTeX ]
Analysis of marker motion in thin-film silicide formation. / Tu, K. N.
In: Journal of Applied Physics, Vol. 48, No. 8, 1977, p. 3379-3382.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review