Analysis of marker motion in thin-film silicide formation

K. N. Tu

doi:10.1063/1.324178

Analysis of marker motion in thin-film silicide formation

K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

37 Citations (Scopus)

Abstract

A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni₂Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni₂Si at 325 °C have been determined; D_Ni=1.7×10^-14 cm²/sec and D_Si=0.6×10^-14 cm²/sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.

Original language	English
Pages (from-to)	3379-3382
Journal	Journal of Applied Physics
Volume	48
Issue number	8
DOIs	https://doi.org/10.1063/1.324178
Publication status	Published - 1977
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Analysis of marker motion in thin-film silicide formation",

abstract = "A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni2Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni2Si at 325 °C have been determined; DNi=1.7×10-14 cm2/sec and DSi=0.6×10-14 cm2/sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.",

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doi = "10.1063/1.324178",

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journal = "Journal of Applied Physics",

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AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1977

Y1 - 1977

N2 - A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni2Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni2Si at 325 °C have been determined; DNi=1.7×10-14 cm2/sec and DSi=0.6×10-14 cm2/sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.

AB - A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni2Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni2Si at 325 °C have been determined; DNi=1.7×10-14 cm2/sec and DSi=0.6×10-14 cm2/sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0017525841&origin=recordpage

U2 - 10.1063/1.324178

DO - 10.1063/1.324178

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 48

SP - 3379

EP - 3382

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Analysis of marker motion in thin-film silicide formation

Abstract

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