Analysis of formation of hafnium silicide on silicon

C. J. Kircher; J. W. Mayer; K. N. Tu; J. F. Ziegler

doi:10.1063/1.1654565

Analysis of formation of hafnium silicide on silicon

C. J. Kircher
, J. W. Mayer
, K. N. Tu
, J. F. Ziegler

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

35 Citations (Scopus)

Abstract

Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species. © 1973 American Institute of Physics.

Original language	English
Pages (from-to)	81-83
Journal	Applied Physics Letters
Volume	22
Issue number	2
DOIs	https://doi.org/10.1063/1.1654565
Publication status	Published - 1973
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Analysis of formation of hafnium silicide on silicon",

abstract = "Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.\%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species. {\textcopyright} 1973 American Institute of Physics.",

author = "Kircher, \{C. J.\} and Mayer, \{J. W.\} and Tu, \{K. N.\} and Ziegler, \{J. F.\}",

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doi = "10.1063/1.1654565",

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pages = "81--83",

journal = "Applied Physics Letters",

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T1 - Analysis of formation of hafnium silicide on silicon

AU - Kircher, C. J.

AU - Mayer, J. W.

AU - Tu, K. N.

AU - Ziegler, J. F.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1973

Y1 - 1973

N2 - Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species. © 1973 American Institute of Physics.

AB - Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species. © 1973 American Institute of Physics.

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U2 - 10.1063/1.1654565

DO - 10.1063/1.1654565

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 22

SP - 81

EP - 83

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Analysis of formation of hafnium silicide on silicon

Abstract

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