Analysis of formation of hafnium silicide on silicon
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 81-83 |
| Journal / Publication | Applied Physics Letters |
| Volume | 22 |
| Issue number | 2 |
| Publication status | Published - 1973 |
| Externally published | Yes |
Link(s)
Abstract
Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species. © 1973 American Institute of Physics.
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Citation Format(s)
Analysis of formation of hafnium silicide on silicon. / Kircher, C. J.; Mayer, J. W.; Tu, K. N. et al.
In: Applied Physics Letters, Vol. 22, No. 2, 1973, p. 81-83.
In: Applied Physics Letters, Vol. 22, No. 2, 1973, p. 81-83.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
