Analysis of formation of hafnium silicide on silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • C. J. Kircher
  • J. W. Mayer
  • K. N. Tu
  • J. F. Ziegler

Detail(s)

Original languageEnglish
Pages (from-to)81-83
Journal / PublicationApplied Physics Letters
Volume22
Issue number2
Publication statusPublished - 1973
Externally publishedYes

Abstract

Backscattering of He ions and Seemann-Bohlin x-ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable-phase HfSi was formed in the temperature region 550-750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species. © 1973 American Institute of Physics.

Bibliographic Note

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Citation Format(s)

Analysis of formation of hafnium silicide on silicon. / Kircher, C. J.; Mayer, J. W.; Tu, K. N.; Ziegler, J. F.

In: Applied Physics Letters, Vol. 22, No. 2, 1973, p. 81-83.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review