TY - JOUR
T1 - Analysis and modeling of the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN HEMTs
AU - Luo, Haorui
AU - Zhong, Zheng
AU - Hu, Wenrui
AU - Guo, Yongxin
PY - 2021/4
Y1 - 2021/4
N2 - Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrinsic capacitances with temperature. This letter analyzes the causes of unmodeled phenomena and characterizes them based on device physics. Verifications show that the improved intrinsic capacitance model in this letter effectively enhances the accuracy of the HEMT model at non-nominal temperatures. © 2021 IEEE.
AB - Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrinsic capacitances with temperature. This letter analyzes the causes of unmodeled phenomena and characterizes them based on device physics. Verifications show that the improved intrinsic capacitance model in this letter effectively enhances the accuracy of the HEMT model at non-nominal temperatures. © 2021 IEEE.
KW - AlGaN/GaN high electron mobility transistors (HEMTs)
KW - Intrinsic capacitances
KW - Large-signal modeling
KW - Thermal effects
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U2 - 10.1109/LMWC.2021.3057444
DO - 10.1109/LMWC.2021.3057444
M3 - RGC 21 - Publication in refereed journal
SN - 1531-1309
VL - 31
SP - 373
EP - 376
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 4
ER -