Analysis and modeling of the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN HEMTs

Haorui Luo, Zheng Zhong, Wenrui Hu, Yongxin Guo*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

18 Citations (Scopus)

Abstract

Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrinsic capacitances with temperature. This letter analyzes the causes of unmodeled phenomena and characterizes them based on device physics. Verifications show that the improved intrinsic capacitance model in this letter effectively enhances the accuracy of the HEMT model at non-nominal temperatures. © 2021 IEEE.
Original languageEnglish
Pages (from-to)373-376
JournalIEEE Microwave and Wireless Components Letters
Volume31
Issue number4
Online published17 Feb 2021
DOIs
Publication statusPublished - Apr 2021
Externally publishedYes

Research Keywords

  • AlGaN/GaN high electron mobility transistors (HEMTs)
  • Intrinsic capacitances
  • Large-signal modeling
  • Thermal effects

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