TY - JOUR
T1 - Analysis and Equivalent-Circuit Model for CMOS On-Chip Multiple Coupled Inductors in the Millimeter-Wave Region
AU - Gao, Zongzhi
AU - Kang, Kai
AU - Jiang, Zhengdong
AU - Wu, Yunqiu
AU - Zhao, Chenxi
AU - Ban, Yong-Lin
AU - Sun, Lingling
AU - Xue, Quan
AU - Yin, Wen-Yan
PY - 2015/12/1
Y1 - 2015/12/1
N2 - A growing number of on-chip inductors have been applied in the millimeter-wave IC design. The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a new equivalent-circuit model and a parameter extraction method for multiple on-chip inductors in the millimeter-wave region are proposed. The impacts of coupling effects on every on-chip inductor are comprehensive considered in the proposed parameter extraction method. The characteristics of the multiple on-chip-coupled inductors are analyzed, modeled, and measured. The test structures were fabricated by 0.18-μ m and 90-nm CMOS processes. The inductances, quality factors, and S-parameters of the model agree well with the measured performance of on-chip-nested and side-by-side-coupled inductors over a wide frequency range from 10 MHz up to millimeter-wave frequency band.
AB - A growing number of on-chip inductors have been applied in the millimeter-wave IC design. The coupling effects between them have a negative impact on the performance of the circuit and each on-chip inductor. In this paper, a new equivalent-circuit model and a parameter extraction method for multiple on-chip inductors in the millimeter-wave region are proposed. The impacts of coupling effects on every on-chip inductor are comprehensive considered in the proposed parameter extraction method. The characteristics of the multiple on-chip-coupled inductors are analyzed, modeled, and measured. The test structures were fabricated by 0.18-μ m and 90-nm CMOS processes. The inductances, quality factors, and S-parameters of the model agree well with the measured performance of on-chip-nested and side-by-side-coupled inductors over a wide frequency range from 10 MHz up to millimeter-wave frequency band.
KW - CMOS
KW - equivalent-circuit model
KW - millimeter wave
KW - multiple coupled inductors
KW - nested coupled inductors.
UR - http://www.scopus.com/inward/record.url?scp=84959554028&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84959554028&origin=recordpage
U2 - 10.1109/TED.2015.2488840
DO - 10.1109/TED.2015.2488840
M3 - RGC 21 - Publication in refereed journal
SN - 0018-9383
VL - 62
SP - 3957
EP - 3964
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
M1 - 7312452
ER -