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An upconverted photonic nonvolatile memory

Ye Zhou, Su-Ting Han, Xian Chen, Feng Wang, Yong-Bing Tang, V. A L Roy

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics. © 2014 Macmillan Publishers Limited.
Original languageEnglish
Article number4720
JournalNature Communications
Volume5
Online published21 Aug 2014
DOIs
Publication statusPublished - 2014

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