An upconverted photonic nonvolatile memory

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Ye Zhou
  • Su-Ting Han
  • Yong-Bing Tang

Detail(s)

Original languageEnglish
Article number4720
Journal / PublicationNature Communications
Volume5
Online published21 Aug 2014
Publication statusPublished - 2014

Abstract

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics. © 2014 Macmillan Publishers Limited.

Citation Format(s)

An upconverted photonic nonvolatile memory. / Zhou, Ye; Han, Su-Ting; Chen, Xian et al.
In: Nature Communications, Vol. 5, 4720, 2014.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review