TY - GEN
T1 - An overview of charge pumping circuits for flash memory applications
AU - Wong, Oi-Ying
AU - Wong, Hei
AU - Tam, Wing-Shan
AU - Kok, Chi-Wah
PY - 2011
Y1 - 2011
N2 - Charge pump is an indispensable component in flash memory systems in order to generate high operation voltages for programming flash memory cells. In this paper, we review some high-efficiency charge pump circuits that fulfill the stringent requirements in modern flash memory technology. The performance of these charge pump circuits will be compared in terms of voltage conversion efficiency, power efficiency, area, and process requirement. Some advanced charge pump circuits proposed recently will also be introduced. © 2011 IEEE.
AB - Charge pump is an indispensable component in flash memory systems in order to generate high operation voltages for programming flash memory cells. In this paper, we review some high-efficiency charge pump circuits that fulfill the stringent requirements in modern flash memory technology. The performance of these charge pump circuits will be compared in terms of voltage conversion efficiency, power efficiency, area, and process requirement. Some advanced charge pump circuits proposed recently will also be introduced. © 2011 IEEE.
UR - https://www.scopus.com/pages/publications/84860855955
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84860855955&origin=recordpage
U2 - 10.1109/ASICON.2011.6157136
DO - 10.1109/ASICON.2011.6157136
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781612841908
SP - 116
EP - 119
BT - Proceedings of International Conference on ASIC
T2 - 2011 IEEE 9th International Conference on ASIC, ASICON 2011
Y2 - 25 October 2011 through 28 October 2011
ER -