An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration

Tin-ho LI; Jian-jing WANG; Henry Shu-hung CHUNG

doi:10.1109/ECCE.2010.5618008

An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration

Tin-ho LI
, Jian-jing WANG
, Henry Shu-hung CHUNG^*

^*Corresponding author for this work

School of Energy and Environment

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

This paper presents an investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode (MSD) configuration commonly found in a power converter. An analytical loss model that takes the circuit stray inductances, MOSFET parasitic capacitances, and reverse-recovery characteristic of the freewheeling diode into consideration is derived to describe the interaction among the MOSFET, snubber and freewheeling diode during switching transitions. It is then used to study the effects of the circuit stray inductances, gate drive resistance and snubber on affecting the switching behavior, power loss distribution in the entire MSD configuration and voltage stress on the MOSFET. A sequence of steps will be given to illustrate how an optimal value of the gate drive resistance is determined, in order to minimize the overall loss of the MSD configuration for a maximum permissible voltage stress on the MOSFET. The loss model and method of determining the gate drive resistance are evaluated by comparing the theoretical predictions with the experimental results of a 1kW, 230V, 50/60Hz boost-type power factor corrector. The performances of the MSD configuration with different types and brands of MOSFETs and freewheeling diodes will be studied.

Original language	English
Title of host publication	ECCE 2010 - IEEE ENERGY CONVERSION CONGRESS & EXPO - proceedings
Pages	362-369
DOIs	https://doi.org/10.1109/ECCE.2010.5618008
Publication status	Published - Sept 2010
Event	2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010) - Hilton Atlanta Hotel, Atlanta, United States Duration: 12 Sept 2010 → 16 Sept 2010 https://ieeexplore.ieee.org/xpl/conhome/5606065/proceeding

Conference

Conference	2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010)
Place	United States
City	Atlanta
Period	12/09/10 → 16/09/10
Internet address	https://ieeexplore.ieee.org/xpl/conhome/5606065/proceeding

Research Keywords

Diodes
Metal-oxide semiconductor field-effect transistor (MOSFET)
Switching power loss

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@inproceedings{3f044c227cff4ea0a70d21298be51357,

title = "An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration",

abstract = "This paper presents an investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode (MSD) configuration commonly found in a power converter. An analytical loss model that takes the circuit stray inductances, MOSFET parasitic capacitances, and reverse-recovery characteristic of the freewheeling diode into consideration is derived to describe the interaction among the MOSFET, snubber and freewheeling diode during switching transitions. It is then used to study the effects of the circuit stray inductances, gate drive resistance and snubber on affecting the switching behavior, power loss distribution in the entire MSD configuration and voltage stress on the MOSFET. A sequence of steps will be given to illustrate how an optimal value of the gate drive resistance is determined, in order to minimize the overall loss of the MSD configuration for a maximum permissible voltage stress on the MOSFET. The loss model and method of determining the gate drive resistance are evaluated by comparing the theoretical predictions with the experimental results of a 1kW, 230V, 50/60Hz boost-type power factor corrector. The performances of the MSD configuration with different types and brands of MOSFETs and freewheeling diodes will be studied.",

keywords = "Diodes, Metal-oxide semiconductor field-effect transistor (MOSFET), Switching power loss",

author = "Tin-ho LI and Jian-jing WANG and CHUNG, \{Henry Shu-hung\}",

year = "2010",

month = sep,

doi = "10.1109/ECCE.2010.5618008",

language = "English",

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pages = "362--369",

booktitle = "ECCE 2010 - IEEE ENERGY CONVERSION CONGRESS \& EXPO - proceedings",

note = "2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010) ; Conference date: 12-09-2010 Through 16-09-2010",

url = "https://ieeexplore.ieee.org/xpl/conhome/5606065/proceeding",

}

LI, T, WANG, J & CHUNG, HS 2010, An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration. in ECCE 2010 - IEEE ENERGY CONVERSION CONGRESS & EXPO - proceedings., 5618008, pp. 362-369, 2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010), Atlanta, Georgia, United States, 12/09/10. https://doi.org/10.1109/ECCE.2010.5618008

An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration. / LI, Tin-ho; WANG, Jian-jing; CHUNG, Henry Shu-hung.
ECCE 2010 - IEEE ENERGY CONVERSION CONGRESS & EXPO - proceedings. 2010. p. 362-369 5618008.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration

AU - LI, Tin-ho

AU - WANG, Jian-jing

AU - CHUNG, Henry Shu-hung

PY - 2010/9

Y1 - 2010/9

N2 - This paper presents an investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode (MSD) configuration commonly found in a power converter. An analytical loss model that takes the circuit stray inductances, MOSFET parasitic capacitances, and reverse-recovery characteristic of the freewheeling diode into consideration is derived to describe the interaction among the MOSFET, snubber and freewheeling diode during switching transitions. It is then used to study the effects of the circuit stray inductances, gate drive resistance and snubber on affecting the switching behavior, power loss distribution in the entire MSD configuration and voltage stress on the MOSFET. A sequence of steps will be given to illustrate how an optimal value of the gate drive resistance is determined, in order to minimize the overall loss of the MSD configuration for a maximum permissible voltage stress on the MOSFET. The loss model and method of determining the gate drive resistance are evaluated by comparing the theoretical predictions with the experimental results of a 1kW, 230V, 50/60Hz boost-type power factor corrector. The performances of the MSD configuration with different types and brands of MOSFETs and freewheeling diodes will be studied.

AB - This paper presents an investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode (MSD) configuration commonly found in a power converter. An analytical loss model that takes the circuit stray inductances, MOSFET parasitic capacitances, and reverse-recovery characteristic of the freewheeling diode into consideration is derived to describe the interaction among the MOSFET, snubber and freewheeling diode during switching transitions. It is then used to study the effects of the circuit stray inductances, gate drive resistance and snubber on affecting the switching behavior, power loss distribution in the entire MSD configuration and voltage stress on the MOSFET. A sequence of steps will be given to illustrate how an optimal value of the gate drive resistance is determined, in order to minimize the overall loss of the MSD configuration for a maximum permissible voltage stress on the MOSFET. The loss model and method of determining the gate drive resistance are evaluated by comparing the theoretical predictions with the experimental results of a 1kW, 230V, 50/60Hz boost-type power factor corrector. The performances of the MSD configuration with different types and brands of MOSFETs and freewheeling diodes will be studied.

KW - Diodes

KW - Metal-oxide semiconductor field-effect transistor (MOSFET)

KW - Switching power loss

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U2 - 10.1109/ECCE.2010.5618008

DO - 10.1109/ECCE.2010.5618008

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424452866

SN - 9781424452873

SP - 362

EP - 369

BT - ECCE 2010 - IEEE ENERGY CONVERSION CONGRESS & EXPO - proceedings

T2 - 2nd Annual IEEE Energy Conversion Congress and Exposition (ECCE 2010)

Y2 - 12 September 2010 through 16 September 2010

ER -

An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration

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