An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure

Ming Yu Chao; Abid Ali; Sagnik Ghosh; Joshua E.-Y. Lee

doi:10.1109/TRANSDUCERS.2017.7994122

An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure

Ming Yu Chao, Abid Ali, Sagnik Ghosh, Joshua E.-Y. Lee^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

17 Citations (Scopus)

Abstract

We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.

Original language	English
Title of host publication	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
Publisher	IEEE
Pages	607-610
ISBN (Electronic)	978-1-5386-2732-7
ISBN (Print)	9781538627310
DOIs	https://doi.org/10.1109/TRANSDUCERS.2017.7994122
Publication status	Published - Jun 2017
Event	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung Exhibition Center, Kaohsiung, Taiwan Duration: 18 Jun 2017 → 22 Jun 2017 http://www.transducers2017.org/

Conference

Conference	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
Abbreviated title	TRANSDUCERS 2017
Country/Territory	Taiwan
City	Kaohsiung
Period	18/06/17 → 22/06/17
Internet address	http://www.transducers2017.org/

Research Keywords

Aluminum nitride-on-silicon
MEMS accelerometers
post-CMOS-compatible
resonant sensing

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10.1109/TRANSDUCERS.2017.7994122

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title = "An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure",

abstract = "We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.",

keywords = "Aluminum nitride-on-silicon, MEMS accelerometers, post-CMOS-compatible, resonant sensing",

author = "Chao, {Ming Yu} and Abid Ali and Sagnik Ghosh and Lee, {Joshua E.-Y.}",

year = "2017",

month = jun,

doi = "10.1109/TRANSDUCERS.2017.7994122",

language = "English",

isbn = "9781538627310",

pages = "607--610",

booktitle = "TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems",

publisher = "IEEE",

address = "United States",

note = "19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, TRANSDUCERS 2017 ; Conference date: 18-06-2017 Through 22-06-2017",

url = "http://www.transducers2017.org/",

}

Chao, MY , Ali, A , Ghosh, S & Lee, JE-Y 2017, An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure. in TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems., 7994122, IEEE, pp. 607-610, 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, Kaohsiung, Taiwan, 18/06/17. https://doi.org/10.1109/TRANSDUCERS.2017.7994122

An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure. / Chao, Ming Yu ; Ali, Abid ; Ghosh, Sagnik et al.
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. IEEE, 2017. p. 607-610 7994122.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure

AU - Chao, Ming Yu

AU - Ali, Abid

AU - Ghosh, Sagnik

AU - Lee, Joshua E.-Y.

PY - 2017/6

Y1 - 2017/6

N2 - We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.

AB - We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.

KW - Aluminum nitride-on-silicon

KW - MEMS accelerometers

KW - post-CMOS-compatible

KW - resonant sensing

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DO - 10.1109/TRANSDUCERS.2017.7994122

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781538627310

SP - 607

EP - 610

BT - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

PB - IEEE

T2 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017

Y2 - 18 June 2017 through 22 June 2017

ER -

An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure

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