An 11-W Ka-Band GaN HPA MMIC Based on Self-Developed Empirical Model

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

19 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Title of host publication2020 IEEE Asia-Pacific Microwave Conference (APMC)
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages254-256
ISBN (print)9781728169620
Publication statusPublished - Dec 2020
Externally publishedYes

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Title2020 Asia-Pacific Microwave Conference
LocationVirtual
PlaceHong Kong
CityVirtual, Hong Kong
Period8 - 11 December 2020

Abstract

In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes the 150-nm GaN-SiC HEMT process and self-developed empirical model. By incorporating wideband matching networks and Lange couplers, large saturated output power, high gain, and good matching conditions are realized simultaneously. Simulated in continuous-wave (CW) operation, the proposed MMIC enjoys 20 dB gain covering 3-dB bandwidth of 3236 GHz with better than -8 dB impedance matching. For large-signal performance, 11 W peak output power (Psat) associated with 24% power-added-efficiency (PAE) is achieved at 34.2 GHz. The die size of the proposed HPA core is 3.5×4.0 mm. © 2020 IEEE.

Research Area(s)

  • empirical model, Gallium Nitride, High power amplifier, Ka-Band, MMICs

Citation Format(s)

An 11-W Ka-Band GaN HPA MMIC Based on Self-Developed Empirical Model. / Yan, Xu; Zhang, Jingyuan; Hu, Wenrui et al.
2020 IEEE Asia-Pacific Microwave Conference (APMC). Institute of Electrical and Electronics Engineers, Inc., 2020. p. 254-256 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review