Abstract
In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes the 150-nm GaN-SiC HEMT process and self-developed empirical model. By incorporating wideband matching networks and Lange couplers, large saturated output power, high gain, and good matching conditions are realized simultaneously. Simulated in continuous-wave (CW) operation, the proposed MMIC enjoys 20 dB gain covering 3-dB bandwidth of 3236 GHz with better than -8 dB impedance matching. For large-signal performance, 11 W peak output power (Psat) associated with 24% power-added-efficiency (PAE) is achieved at 34.2 GHz. The die size of the proposed HPA core is 3.5×4.0 mm. © 2020 IEEE.
| Original language | English |
|---|---|
| Title of host publication | 2020 IEEE Asia-Pacific Microwave Conference (APMC) |
| Publisher | IEEE |
| Pages | 254-256 |
| ISBN (Print) | 9781728169620 |
| DOIs | |
| Publication status | Published - Dec 2020 |
| Externally published | Yes |
| Event | 2020 Asia-Pacific Microwave Conference - Virtual, Virtual, Hong Kong, Hong Kong, China Duration: 8 Dec 2020 → 11 Dec 2020 http://www.ee.cityu.edu.hk/skltmw/apmc2020/index.php |
Publication series
| Name | Asia-Pacific Microwave Conference Proceedings, APMC |
|---|
Conference
| Conference | 2020 Asia-Pacific Microwave Conference |
|---|---|
| Abbreviated title | APMC 2020 |
| Place | Hong Kong, China |
| City | Virtual, Hong Kong |
| Period | 8/12/20 → 11/12/20 |
| Internet address |
Research Keywords
- empirical model
- Gallium Nitride
- High power amplifier
- Ka-Band
- MMICs
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