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An 11-W Ka-Band GaN HPA MMIC Based on Self-Developed Empirical Model

  • Xu Yan*
  • , Jingyuan Zhang
  • , Wenrui Hu
  • , Haorui Luo
  • , Yongxin Guo*
  • *Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes the 150-nm GaN-SiC HEMT process and self-developed empirical model. By incorporating wideband matching networks and Lange couplers, large saturated output power, high gain, and good matching conditions are realized simultaneously. Simulated in continuous-wave (CW) operation, the proposed MMIC enjoys 20 dB gain covering 3-dB bandwidth of 3236 GHz with better than -8 dB impedance matching. For large-signal performance, 11 W peak output power (Psat) associated with 24% power-added-efficiency (PAE) is achieved at 34.2 GHz. The die size of the proposed HPA core is 3.5×4.0 mm. © 2020 IEEE.
Original languageEnglish
Title of host publication2020 IEEE Asia-Pacific Microwave Conference (APMC)
PublisherIEEE
Pages254-256
ISBN (Print)9781728169620
DOIs
Publication statusPublished - Dec 2020
Externally publishedYes
Event2020 Asia-Pacific Microwave Conference - Virtual, Virtual, Hong Kong, Hong Kong, China
Duration: 8 Dec 202011 Dec 2020
http://www.ee.cityu.edu.hk/skltmw/apmc2020/index.php

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2020 Asia-Pacific Microwave Conference
Abbreviated titleAPMC 2020
PlaceHong Kong, China
CityVirtual, Hong Kong
Period8/12/2011/12/20
Internet address

Research Keywords

  • empirical model
  • Gallium Nitride
  • High power amplifier
  • Ka-Band
  • MMICs

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