Amorphous GaN1-xAsx alloys for multi-junction solar cells

R. Broesler; K. M. Yu; S. V. Novikov; Z. Liliental-Weber; E. E. Haller; W. Walukiewicz; C. T. Foxon

doi:10.1109/PVSC.2010.5617088

Amorphous GaN_1-xAs_x alloys for multi-junction solar cells

R. Broesler, K. M. Yu, S. V. Novikov, Z. Liliental-Weber, E. E. Haller, W. Walukiewicz, C. T. Foxon

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

We propose GaN_1-xAs_x as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecular beam epitaxy (MBE) growth method results in amorphous films across much of the composition range (0.12 <x <0.80), which eliminates the need for a lattice matched substrate. We present results for growth of homogeneous GaN_1-xAs_x films with strong optical absorption on Pyrex glass substrates with the potential for low cost multi-junction photovoltaics from one material system. Using photo-modulated reflectance spectroscopy and absorption spectroscopy, we have determined the band gaps for alloys with 0 <x <0.88. We find that the band anticrossing model, developed for dilute highly mismatched alloys, can also explain the band gap dependence on composition across the full range. The band gap dependence on composition allows the determination of alloy compositions for single, double and triple junction solar cells with maximum theoretical conversion efficiency. © 2010 IEEE.

Original language	English
Title of host publication	35th IEEE Photovoltaic Specialists Conference
Subtitle of host publication	Conference Proceedings
Publisher	IEEE
Pages	3322-3326
ISBN (Electronic)	9781424458912, 978-1-4244-5892-9
ISBN (Print)	978-1-4244-5890-5
DOIs	https://doi.org/10.1109/PVSC.2010.5617088
Publication status	Published - 2010
Externally published	Yes
Event	35th IEEE Photovoltaic Specialists Conference (PVSC 2010) - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010 http://www.ieee-pvsc.org/PVSC35/

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference (PVSC 2010)
Place	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10
Internet address	http://www.ieee-pvsc.org/PVSC35/

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SDG 7 Affordable and Clean Energy

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Cite this

@inproceedings{452f32ea723d4c5aa8f64d6b07540a28,

title = "Amorphous GaN1-xAsx alloys for multi-junction solar cells",

abstract = "We propose GaN1-xAsx as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecular beam epitaxy (MBE) growth method results in amorphous films across much of the composition range (0.12 1-xAsx films with strong optical absorption on Pyrex glass substrates with the potential for low cost multi-junction photovoltaics from one material system. Using photo-modulated reflectance spectroscopy and absorption spectroscopy, we have determined the band gaps for alloys with 0 <x <0.88. We find that the band anticrossing model, developed for dilute highly mismatched alloys, can also explain the band gap dependence on composition across the full range. The band gap dependence on composition allows the determination of alloy compositions for single, double and triple junction solar cells with maximum theoretical conversion efficiency. {\textcopyright} 2010 IEEE.",

author = "R. Broesler and Yu, {K. M.} and Novikov, {S. V.} and Z. Liliental-Weber and Haller, {E. E.} and W. Walukiewicz and Foxon, {C. T.}",

year = "2010",

doi = "10.1109/PVSC.2010.5617088",

language = "English",

isbn = "978-1-4244-5890-5",

publisher = "IEEE",

pages = "3322--3326",

booktitle = "35th IEEE Photovoltaic Specialists Conference",

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note = "35th IEEE Photovoltaic Specialists Conference (PVSC 2010) ; Conference date: 20-06-2010 Through 25-06-2010",

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Broesler, R, Yu, KM, Novikov, SV, Liliental-Weber, Z, Haller, EE, Walukiewicz, W & Foxon, CT 2010, Amorphous GaN_1-xAs_x alloys for multi-junction solar cells. in 35th IEEE Photovoltaic Specialists Conference: Conference Proceedings. IEEE, pp. 3322-3326, 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Honolulu, HI, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5617088

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T1 - Amorphous GaN1-xAsx alloys for multi-junction solar cells

AU - Broesler, R.

AU - Yu, K. M.

AU - Novikov, S. V.

AU - Liliental-Weber, Z.

AU - Haller, E. E.

AU - Walukiewicz, W.

AU - Foxon, C. T.

PY - 2010

Y1 - 2010

N2 - We propose GaN1-xAsx as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecular beam epitaxy (MBE) growth method results in amorphous films across much of the composition range (0.12 1-xAsx films with strong optical absorption on Pyrex glass substrates with the potential for low cost multi-junction photovoltaics from one material system. Using photo-modulated reflectance spectroscopy and absorption spectroscopy, we have determined the band gaps for alloys with 0 <x <0.88. We find that the band anticrossing model, developed for dilute highly mismatched alloys, can also explain the band gap dependence on composition across the full range. The band gap dependence on composition allows the determination of alloy compositions for single, double and triple junction solar cells with maximum theoretical conversion efficiency. © 2010 IEEE.

AB - We propose GaN1-xAsx as a new absorber material for single alloy multi-junction solar cells. Our recent results reported the first controlled growth of the material system across the full composition range and showed that the band gap can be tuned from 0.8eV to 3.4eV. Our low temperature molecular beam epitaxy (MBE) growth method results in amorphous films across much of the composition range (0.12 1-xAsx films with strong optical absorption on Pyrex glass substrates with the potential for low cost multi-junction photovoltaics from one material system. Using photo-modulated reflectance spectroscopy and absorption spectroscopy, we have determined the band gaps for alloys with 0 <x <0.88. We find that the band anticrossing model, developed for dilute highly mismatched alloys, can also explain the band gap dependence on composition across the full range. The band gap dependence on composition allows the determination of alloy compositions for single, double and triple junction solar cells with maximum theoretical conversion efficiency. © 2010 IEEE.

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DO - 10.1109/PVSC.2010.5617088

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EP - 3326

BT - 35th IEEE Photovoltaic Specialists Conference

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