Amorphous gallium oxide sulfide : A highly mismatched alloy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

2 Scopus Citations
View graph of relations

Author(s)

  • Maribel Jaquez
  • Petra Specht
  • Kin Man Yu
  • Wladek Walukiewicz
  • Oscar D. Dubon

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number105708
Journal / PublicationJournal of Applied Physics
Volume126
Issue number10
Online published13 Sep 2019
Publication statusPublished - 14 Sep 2019

Abstract

Stoichiometric gallium oxide sulfide Ga2(O1 - xSx)3 thin-film alloys were synthesized by pulsed-laser deposition with x ≤ 0.35. All deposited Ga2(O1 - xSx)3 films were found to be amorphous. Despite the amorphous structure, the films have a well-defined, room-temperature optical bandgap tunable from 5.0 eV down to 3.0 eV. The optical absorption data are interpreted using a modified valence-band anticrossing model that is applicable for highly mismatched alloys. The model provides a quantitative method to more accurately determine the bandgap as well as an insight into how the band edges are changing with composition. The observed large reduction in energy bandgap with a small sulfur ratio arises from the anticrossing interaction between the valence band of Ga2O3 and the localized sulfur level at 1.0 eV above the Ga2O3 valence-band maximum.

Citation Format(s)

Amorphous gallium oxide sulfide : A highly mismatched alloy. / Jaquez, Maribel; Specht, Petra; Yu, Kin Man; Walukiewicz, Wladek; Dubon, Oscar D.

In: Journal of Applied Physics, Vol. 126, No. 10, 105708, 14.09.2019.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal