Amorphous CN_x films prepared by electrochemical deposition

Amorphous carbon nitride (CN_x) films have been synthesized by electrochemical deposition on positive biased silicon substrates at room temperature. The films adhere well to the Si substrates, but are softer than Si and have many cracks. Multiple binding energy values obtained for the C 1s and N 1s photoelectrons in the film suggest that the C and N atoms both exhibit three chemical states. The Fourier transformation infrared spectroscopy for the film shows four main bands at 1351 cm^-1, 1660 cm^-1 2147 cm^-1 and 3220 cm^-1, respectively. The N to C concentration ratio was estimated to be 0.1. Red color photoluminescence with a peak at ~630 nm has been observed in the prepared CN_x films.