Amorphous Carbon Films as Planarization Layers Deposited by Plasma-Enhanced Chemical Vapor Deposition
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 391-393 |
Journal / Publication | IEEE Electron Device Letters |
Volume | 11 |
Issue number | 9 |
Publication status | Published - Sept 1990 |
Externally published | Yes |
Link(s)
Abstract
A dry planarization process utilizing plasma-enhanced chemical vapor deposition (PECVD) of amorphous carbon (a-C:H) films has been developed. The degree of planarization obtained for these films is better than that of many conventional spun-on polymers. Carbon films 2.5 µm thick have been shown to planarize 1.5-µm-deep, 400-µm-wide trenches to within 0.2 µm. The deposition process can be carried out at room temperature with low ion bombardment energy (10 V) and fast deposition rate (300 nm /min). The planarization layers have been used in conjunction with both wet and dry deposited inorganic imaging layers in bilayer resist schemes to form submicrometer patterns. © 1990 IEEE
Citation Format(s)
Amorphous Carbon Films as Planarization Layers Deposited by Plasma-Enhanced Chemical Vapor Deposition. / Pang, Stella W.; Horn, M. W.
In: IEEE Electron Device Letters, Vol. 11, No. 9, 09.1990, p. 391-393.
In: IEEE Electron Device Letters, Vol. 11, No. 9, 09.1990, p. 391-393.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review