Abstract
Effects of ambient-air exposure on the energy levels at photovoltaic interface of fullerene (C60) /copper phthalocyanine (CuPc) were studied using ultraviolet photoemission spectroscopy. The junction prepared in ultrahigh vacuum showed flat energy levels with little vacuum level offset, while exposure to ambient air at 10-5 Torr induced p -type doping of C60 with energy levels bend up for 0.27 eV. The energy difference between HOMO CuPc - LUMO C60, describing the theoretical maximum open-circuit voltage, increased from 0.64 to 0.81 eV. The exposure moved the LUMO C60 away from the Fermi level, leading to reduction in carrier concentration and film conductivity. © 2009 American Institute of Physics.
Original language | English |
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Article number | 193304 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2009 |