Aluminum induced formation of SiGe alloy in Ge/Si/Al thin film structure

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

1 Scopus Citations
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Author(s)

  • Emil V. Jelenković
  • O. Kutsay
  • Shrawan K. Jha
  • K. C. Tam
  • P. F. Lee
  • And 1 others
  • I. Bello

Detail(s)

Original languageEnglish
Pages (from-to)771-775
Journal / PublicationJournal of Non-Crystalline Solids
Volume358
Issue number4
StatePublished - 15 Feb 2012

Abstract

In this work, a study of aluminum induced crystallization (AIC) of thin film germanium/silicon/aluminum (Ge/Si/Al) structure on oxidized silicon is presented. The Ge/Si/Al trilayer structure was prepared in three consecutive thin film deposition processes. The AIC was performed in nitrogen at 500 °C within time duration between 1 and 9 h. The progress of crystallization was monitored by optical microscopy, Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) combined with energy dispersive X-ray spectroscopy (EDS). It was found that in Ge/Si/Al structure the AIC can lead to formation of SiGe alloy at temperature of 500 °C. This presents an alternative low-temperature formation method of SiGe which is suitable for integration with the conventional Si technology in electronic device fabrication. © 2011 Elsevier B.V.

Research Area(s)

  • Aluminum induced crystallization (AIC), Crystallization, Poly-Si, Poly-SiGe, Raman spectroscopy

Citation Format(s)

Aluminum induced formation of SiGe alloy in Ge/Si/Al thin film structure. / Jelenković, Emil V.; Kutsay, O.; Jha, Shrawan K.; Tam, K. C.; Lee, P. F.; Bello, I.

In: Journal of Non-Crystalline Solids, Vol. 358, No. 4, 15.02.2012, p. 771-775.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review