Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation

Banani Sen; B. L. Yang; Hei Wong; P. K. Chu; A. Huang; K. Kakushima; H. Iwai

doi:10.1109/EDSSC.2007.4450090

Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation

Banani Sen^*
, B. L. Yang
, Hei Wong
, P. K. Chu
, A. Huang
, K. Kakushima
, H. Iwai

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

The physics and the effects of aluminium incorporation into lanthanum oxide (La₂O₃) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5%) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La₂O₃ films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current. © 2007 IEEE.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	173-176
DOIs	https://doi.org/10.1109/EDSSC.2007.4450090
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, China Duration: 20 Dec 2007 → 22 Dec 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Place	Taiwan, China
City	Tainan
Period	20/12/07 → 22/12/07

Research Keywords

Aluminium
Lanthanum oxide
Plasma immersion ion implantation
X-ray photoelectron spectroscopy

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10.1109/EDSSC.2007.4450090

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@inproceedings{f20ac68581474858a4572cc458b32ecd,

title = "Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation",

abstract = "The physics and the effects of aluminium incorporation into lanthanum oxide (La2O3) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5\%) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La2O3 films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current. {\textcopyright} 2007 IEEE.",

keywords = "Aluminium, Lanthanum oxide, Plasma immersion ion implantation, X-ray photoelectron spectroscopy",

author = "Banani Sen and Yang, \{B. L.\} and Hei Wong and Chu, \{P. K.\} and A. Huang and K. Kakushima and H. Iwai",

year = "2007",

doi = "10.1109/EDSSC.2007.4450090",

language = "English",

isbn = "1424406374",

pages = "173--176",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Sen, B, Yang, BL, Wong, H , Chu, PK, Huang, A, Kakushima, K & Iwai, H 2007, Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450090, pp. 173-176, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, China, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450090

Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation. / Sen, Banani; Yang, B. L.; Wong, Hei et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 173-176 4450090.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation

AU - Sen, Banani

AU - Yang, B. L.

AU - Wong, Hei

AU - Chu, P. K.

AU - Huang, A.

AU - Kakushima, K.

AU - Iwai, H.

PY - 2007

Y1 - 2007

N2 - The physics and the effects of aluminium incorporation into lanthanum oxide (La2O3) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5%) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La2O3 films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current. © 2007 IEEE.

AB - The physics and the effects of aluminium incorporation into lanthanum oxide (La2O3) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5%) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La2O3 films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current. © 2007 IEEE.

KW - Aluminium

KW - Lanthanum oxide

KW - Plasma immersion ion implantation

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/43049162422

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-43049162422&origin=recordpage

U2 - 10.1109/EDSSC.2007.4450090

DO - 10.1109/EDSSC.2007.4450090

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1424406374

SN - 9781424406371

SP - 173

EP - 176

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation

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