AlON phase formation in a tape-cast Al2O3/AlN composite

F.Y.C. Boey; X.L. Song; Z.Y. Gu; A. Tok

doi:10.1016/S0924-0136(99)00134-X

AlON phase formation in a tape-cast Al₂O₃/AlN composite

F.Y.C. Boey^*, X.L. Song, Z.Y. Gu, A. Tok

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

32 Citations (Scopus)

Abstract

Whilst the use of Al₂O₃ substrates by tape casting for multilayer ceramics packaging has been well established, the increasing demand for higher performance has resulted in a composite approach whereby AlN is added as a composite phase. The phase transformation in a tape-cast Al₂O₃/AlN composite substrate thus forms the subject of this investigation. Experimental results showed that the reaction of the two phases became significant after 1550°C, forming a new phase AlON as sintering proceeded. Higher sintering temperatures induced a greater amount of AlON in the sintered Al₂O₃/AlN tapes. This third phase was due to the presence of MgO, which promoted the formation of AlON in sintered tapes even in the presence of purge gases.

Original language	English
Pages (from-to)	478-480
Journal	Journal of Materials Processing Technology
Volume	89-90
DOIs	https://doi.org/10.1016/S0924-0136(99)00134-X
Publication status	Published - 19 May 1999
Externally published	Yes
Event	4th Asia Pacific Conference on Materials Processing (APCMP 1999) - , Singapore Duration: 19 May 1999 → 20 May 1999

Research Keywords

AlON
Al2O3
Tape-cast
Al2O3/AlN

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10.1016/S0924-0136(99)00134-X

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Cite this

@article{9b583e23289243b1baac0d0b48b97946,

title = "AlON phase formation in a tape-cast Al2O3/AlN composite",

abstract = "Whilst the use of Al2O3 substrates by tape casting for multilayer ceramics packaging has been well established, the increasing demand for higher performance has resulted in a composite approach whereby AlN is added as a composite phase. The phase transformation in a tape-cast Al2O3/AlN composite substrate thus forms the subject of this investigation. Experimental results showed that the reaction of the two phases became significant after 1550°C, forming a new phase AlON as sintering proceeded. Higher sintering temperatures induced a greater amount of AlON in the sintered Al2O3/AlN tapes. This third phase was due to the presence of MgO, which promoted the formation of AlON in sintered tapes even in the presence of purge gases.",

keywords = "AlON, Al2O3, Tape-cast, Al2O3/AlN",

author = "F.Y.C. Boey and X.L. Song and Z.Y. Gu and A. Tok",

year = "1999",

month = may,

day = "19",

doi = "10.1016/S0924-0136(99)00134-X",

language = "English",

volume = "89-90",

pages = "478--480",

journal = "Journal of Materials Processing Technology",

issn = "0924-0136",

publisher = "Elsevier B.V.",

note = "4th Asia Pacific Conference on Materials Processing (APCMP 1999) ; Conference date: 19-05-1999 Through 20-05-1999",

}

TY - JOUR

T1 - AlON phase formation in a tape-cast Al2O3/AlN composite

AU - Boey, F.Y.C.

AU - Song, X.L.

AU - Gu, Z.Y.

AU - Tok, A.

PY - 1999/5/19

Y1 - 1999/5/19

N2 - Whilst the use of Al2O3 substrates by tape casting for multilayer ceramics packaging has been well established, the increasing demand for higher performance has resulted in a composite approach whereby AlN is added as a composite phase. The phase transformation in a tape-cast Al2O3/AlN composite substrate thus forms the subject of this investigation. Experimental results showed that the reaction of the two phases became significant after 1550°C, forming a new phase AlON as sintering proceeded. Higher sintering temperatures induced a greater amount of AlON in the sintered Al2O3/AlN tapes. This third phase was due to the presence of MgO, which promoted the formation of AlON in sintered tapes even in the presence of purge gases.

AB - Whilst the use of Al2O3 substrates by tape casting for multilayer ceramics packaging has been well established, the increasing demand for higher performance has resulted in a composite approach whereby AlN is added as a composite phase. The phase transformation in a tape-cast Al2O3/AlN composite substrate thus forms the subject of this investigation. Experimental results showed that the reaction of the two phases became significant after 1550°C, forming a new phase AlON as sintering proceeded. Higher sintering temperatures induced a greater amount of AlON in the sintered Al2O3/AlN tapes. This third phase was due to the presence of MgO, which promoted the formation of AlON in sintered tapes even in the presence of purge gases.

KW - AlON

KW - Al2O3

KW - Tape-cast

KW - Al2O3/AlN

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U2 - 10.1016/S0924-0136(99)00134-X

DO - 10.1016/S0924-0136(99)00134-X

M3 - RGC 21 - Publication in refereed journal

SN - 0924-0136

VL - 89-90

SP - 478

EP - 480

JO - Journal of Materials Processing Technology

JF - Journal of Materials Processing Technology

T2 - 4th Asia Pacific Conference on Materials Processing (APCMP 1999)

Y2 - 19 May 1999 through 20 May 1999

ER -