AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

Ming Zhu; Peng Chen; Ricky K. Y. Fu; Weili Liu; Chenglu Lin; Paul K. Chu

doi:10.1016/j.apsusc.2004.05.287

Author(s)

Ming Zhu
Peng Chen
Ricky K. Y. Fu
Weili Liu
Chenglu Lin

Detail(s)

Original language	English
Pages (from-to)	327-334
Journal / Publication	Applied Surface Science
Volume	239
Issue number	3-4
Publication status	Published - 2005

Link(s)

DOI	DOI https://doi.org/10.1016/j.apsusc.2004.05.287 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-10644290184&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(a61e8f93-62be-4aa5-bb4c-54c8ce52e678).html

Abstract

The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO₂ layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800°C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

AlN thin film, High vacuum electron-beam evaporation, Silicon-on-insulator (SOI)

Citation Format(s)

[ RIS ] [ BibTeX ]

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application. / Zhu, Ming; Chen, Peng; Fu, Ricky K. Y. et al.
In: Applied Surface Science, Vol. 239, No. 3-4, 2005, p. 327-334.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Zhu, M, Chen, P, Fu, RKY, Liu, W, Lin, C & Chu, PK 2005, 'AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application', Applied Surface Science, vol. 239, no. 3-4, pp. 327-334. https://doi.org/10.1016/j.apsusc.2004.05.287

Zhu, M., Chen, P., Fu, R. K. Y., Liu, W., Lin, C., & Chu, P. K. (2005). AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application. Applied Surface Science, 239(3-4), 327-334. https://doi.org/10.1016/j.apsusc.2004.05.287

Zhu M, Chen P, Fu RKY, Liu W, Lin C, Chu PK. AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application. Applied Surface Science. 2005;239(3-4):327-334. doi: 10.1016/j.apsusc.2004.05.287

Zhu, Ming ; Chen, Peng ; Fu, Ricky K. Y. et al. / AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application. In: Applied Surface Science. 2005 ; Vol. 239, No. 3-4. pp. 327-334.