AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

Ming Zhu; Peng Chen; Ricky K. Y. Fu; Weili Liu; Chenglu Lin; Paul K. Chu

doi:10.1016/j.apsusc.2004.05.287

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

Ming Zhu
, Peng Chen
, Ricky K. Y. Fu
, Weili Liu
, Chenglu Lin
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO₂ layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800°C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed. © 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	327-334
Journal	Applied Surface Science
Volume	239
Issue number	3-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.287
Publication status	Published - 2005

Research Keywords

AlN thin film
High vacuum electron-beam evaporation
Silicon-on-insulator (SOI)

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10.1016/j.apsusc.2004.05.287

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@article{a61e8f9362be4aa5bb4c54c8ce52e678,

title = "AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application",

abstract = "The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO2 layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800°C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

keywords = "AlN thin film, High vacuum electron-beam evaporation, Silicon-on-insulator (SOI)",

author = "Ming Zhu and Peng Chen and Fu, \{Ricky K. Y.\} and Weili Liu and Chenglu Lin and Chu, \{Paul K.\}",

year = "2005",

doi = "10.1016/j.apsusc.2004.05.287",

language = "English",

volume = "239",

pages = "327--334",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "3-4",

}

TY - JOUR

T1 - AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

AU - Zhu, Ming

AU - Chen, Peng

AU - Fu, Ricky K. Y.

AU - Liu, Weili

AU - Lin, Chenglu

AU - Chu, Paul K.

PY - 2005

Y1 - 2005

N2 - The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO2 layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800°C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed. © 2004 Elsevier B.V. All rights reserved.

AB - The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO2 layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800°C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed. © 2004 Elsevier B.V. All rights reserved.

KW - AlN thin film

KW - High vacuum electron-beam evaporation

KW - Silicon-on-insulator (SOI)

UR - https://www.scopus.com/pages/publications/10644290184

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-10644290184&origin=recordpage

U2 - 10.1016/j.apsusc.2004.05.287

DO - 10.1016/j.apsusc.2004.05.287

M3 - RGC 21 - Publication in refereed journal

SN - 0169-4332

VL - 239

SP - 327

EP - 334

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3-4

ER -

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

Abstract

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