TY - JOUR
T1 - All-Inorganic Perovskite-Based Monolithic Perovskite/Organic Tandem Solar Cells with 23.21% Efficiency by Dual-Interface Engineering
AU - Sun, Shuang-Qiao
AU - Xu, Xiuwen
AU - Sun, Qi
AU - Yao, Qin
AU - Cai, Yating
AU - Li, Xin-Yi
AU - Xu, Yan-Lin
AU - He, Wei
AU - Zhu, Min
AU - Lv, Xuan
AU - Lin, Francis R.
AU - Jen, Alex K.-Y.
AU - Shi, Tingting
AU - Yip, Hin-Lap
AU - Fung, Man-Keung
AU - Xie, Yue-Min
PY - 2023/4/26
Y1 - 2023/4/26
N2 - Monolithic perovskite/organic tandem solar cells (POTSCs) have significant advantages in next-generation flexible photovoltaics, owing to their capability to overcome the Shockley–Queisser limit and facile device integration. However, the compromised sub-cells performance challenges the fabrication of high-efficiency POTSCs. Especially for all-inorganic wide-bandgap perovskite front sub-cells (AIWPSCs) based n-i-p structured POTSCs (AIPOTSCs), for which the power conversion efficiency (PCE) is much lower than organic–inorganic mixed-halide wide-bandgap perovskite based POTSCs. Herein, an ionic liquid, methylammonium formate (MAFm), based dual-interface engineering approach is developed to modify the bottom and top interfaces of wide-bandgap CsPbI2Br films. In particular, the Fm− group of MAFm can effectively passivate the interface defects, and the top interface modification can facilitate the formation of uniform perovskite films with enlarged grain size, thereby mitigating the defects and perovskite grain boundaries induced carrier recombination. As a result, CsPbI2Br-based AIWPSCs with a high PCE of 17.0% and open-circuit voltage (VOC) of 1.347 V are achieved. By integrating these dual-interface engineered CsPbI2Br-based front sub-cells with the narrow-bandgap PM6:CH1007-based rear sub-cells, a record PCE of 23.21% is obtained for AIPOTSCs, illustrating the potential of AIPOTSCs for achieving high-efficiency tandem solar cells. © 2023 Wiley-VCH GmbH.
AB - Monolithic perovskite/organic tandem solar cells (POTSCs) have significant advantages in next-generation flexible photovoltaics, owing to their capability to overcome the Shockley–Queisser limit and facile device integration. However, the compromised sub-cells performance challenges the fabrication of high-efficiency POTSCs. Especially for all-inorganic wide-bandgap perovskite front sub-cells (AIWPSCs) based n-i-p structured POTSCs (AIPOTSCs), for which the power conversion efficiency (PCE) is much lower than organic–inorganic mixed-halide wide-bandgap perovskite based POTSCs. Herein, an ionic liquid, methylammonium formate (MAFm), based dual-interface engineering approach is developed to modify the bottom and top interfaces of wide-bandgap CsPbI2Br films. In particular, the Fm− group of MAFm can effectively passivate the interface defects, and the top interface modification can facilitate the formation of uniform perovskite films with enlarged grain size, thereby mitigating the defects and perovskite grain boundaries induced carrier recombination. As a result, CsPbI2Br-based AIWPSCs with a high PCE of 17.0% and open-circuit voltage (VOC) of 1.347 V are achieved. By integrating these dual-interface engineered CsPbI2Br-based front sub-cells with the narrow-bandgap PM6:CH1007-based rear sub-cells, a record PCE of 23.21% is obtained for AIPOTSCs, illustrating the potential of AIPOTSCs for achieving high-efficiency tandem solar cells. © 2023 Wiley-VCH GmbH.
KW - AIWPSCs
KW - high-efficiency
KW - interface modification
KW - POTSCs
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85148286807&origin=recordpage
U2 - 10.1002/aenm.202204347
DO - 10.1002/aenm.202204347
M3 - RGC 21 - Publication in refereed journal
SN - 1614-6832
VL - 13
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 16
M1 - 2204347
ER -