AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure

S. Valeri; U. del Pennino; G. Ottaviani; P. Sassaroli; K. N. Tu

doi:10.1016/0038-1098(86)90272-3

Author(s)

S. Valeri
U. del Pennino
G. Ottaviani
P. Sassaroli
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	569-573
Journal / Publication	Solid State Communications
Volume	60
Issue number	7
Publication status	Published - Nov 1986
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/0038-1098(86)90272-3 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-46149134815&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(23af07f6-fe1c-4c98-8e64-53b8d8e27d6e).html

Abstract

We report on Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) investigations on ErSi₂ : the silicide behaviour under Ar⁺ bombardment (1-5 KeV) and oxygen exposure at room temperature was studied. The ion beam processed surface shows a Si enrichment, resulting in an ErSi-like stoichiometry. This result suggests a predominant role of the mass difference between Er and Si in the sputtering mechanism of ErSi₂ At exposure up to 10³ langmuirs, both components of the silicide react with oxygen. Firstly, Er oxide is formed, in an Er₂O₃-like state. After the consumption of the available Er atoms in the surface layer, SiO₂ starts to grow. These results are interpreted in terms of a greater heat of formation for Er oxide than for Si oxide. © 1986.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure. / Valeri, S.; del Pennino, U.; Ottaviani, G. et al.
In: Solid State Communications, Vol. 60, No. 7, 11.1986, p. 569-573.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Valeri, S, del Pennino, U, Ottaviani, G, Sassaroli, P & Tu, KN 1986, 'AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure', Solid State Communications, vol. 60, no. 7, pp. 569-573. https://doi.org/10.1016/0038-1098(86)90272-3

Valeri, S., del Pennino, U., Ottaviani, G., Sassaroli, P., & Tu, K. N. (1986). AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure. Solid State Communications, 60(7), 569-573. https://doi.org/10.1016/0038-1098(86)90272-3

Valeri S, del Pennino U, Ottaviani G, Sassaroli P, Tu KN. AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure. Solid State Communications. 1986 Nov;60(7):569-573. doi: 10.1016/0038-1098(86)90272-3

Valeri, S. ; del Pennino, U. ; Ottaviani, G. et al. / AES and EELS study of ErSi₂ and its behaviour under ion bombardment and oxygen exposure. In: Solid State Communications. 1986 ; Vol. 60, No. 7. pp. 569-573.