TY - JOUR
T1 - Adsorption of O2, H2, CO, NH3, and NO 2 on ZnO nanotube
T2 - A density functional theory study
AU - An, Wei
AU - Wu, Xiaojun
AU - Zeng, X. C.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2008/4/17
Y1 - 2008/4/17
N2 - Using density functional theory (DFT), we have investigated the structural and electronic properties of a prototype ZnO (6,0) zigzag single-walled nanotube (SWNT) with and without oxygen vacancy (Vo), as well as its potential application as a sensor for gas molecules O2, H 2, CO, NH3, and NO2. The DFT calculation shows that the defect-free ZnO (6,0) SWNT is semiconducting with a direct band gap larger than that of bulk ZnO. By introducing the Vo defects, localized impurity states are induced above the valence band maximum while the Fermi level is lifted. As such, the defect-containing ZnO (6,0) SWNT becomes an n-type semiconductor. On the sidewall of a defect-free ZnO (6,0) SWNT, O 2 and H2 molecules are physisorbed while CO, NH 3, and NO2 are molecularly chemisorbed. With the V o defects, the binding interaction between gas molecules and the ZnO nanotube becomes stronger. The electron-donor molecules (CO and NH3) tend to enhance the concentration of major carriers (electrons), whereas the electron-acceptor molecules (O2 and NO2) tend to reduce the concentration. Moreover, we find that O2 and NO2 can dissociate at the Vo sites through filling the Vo with one atomic O originated from the adsorbates. The dissociation of O2 is exothermic and barrierless while the dissociation of NO2 is also exothermic but entails a small activation barrier (0.49 eV). © 2008 American Chemical Society.
AB - Using density functional theory (DFT), we have investigated the structural and electronic properties of a prototype ZnO (6,0) zigzag single-walled nanotube (SWNT) with and without oxygen vacancy (Vo), as well as its potential application as a sensor for gas molecules O2, H 2, CO, NH3, and NO2. The DFT calculation shows that the defect-free ZnO (6,0) SWNT is semiconducting with a direct band gap larger than that of bulk ZnO. By introducing the Vo defects, localized impurity states are induced above the valence band maximum while the Fermi level is lifted. As such, the defect-containing ZnO (6,0) SWNT becomes an n-type semiconductor. On the sidewall of a defect-free ZnO (6,0) SWNT, O 2 and H2 molecules are physisorbed while CO, NH 3, and NO2 are molecularly chemisorbed. With the V o defects, the binding interaction between gas molecules and the ZnO nanotube becomes stronger. The electron-donor molecules (CO and NH3) tend to enhance the concentration of major carriers (electrons), whereas the electron-acceptor molecules (O2 and NO2) tend to reduce the concentration. Moreover, we find that O2 and NO2 can dissociate at the Vo sites through filling the Vo with one atomic O originated from the adsorbates. The dissociation of O2 is exothermic and barrierless while the dissociation of NO2 is also exothermic but entails a small activation barrier (0.49 eV). © 2008 American Chemical Society.
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U2 - 10.1021/jp711105d
DO - 10.1021/jp711105d
M3 - RGC 21 - Publication in refereed journal
SN - 1932-7447
VL - 112
SP - 5747
EP - 5755
JO - The Journal of Physical Chemistry C
JF - The Journal of Physical Chemistry C
IS - 15
ER -