Above threshold pFET injection modeling intended for programmingfloating- gate systems

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number4252949
Pages (from-to)1557-1560
Journal / PublicationProceedings - IEEE International Symposium on Circuits and Systems
Publication statusPublished - 2007
Externally publishedYes

Conference

Title2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007
PlaceUnited States
CityNew Orleans, LA
Period27 - 30 May 2007

Abstract

We present a first-order model for pFET hot-electron injection that is consistent for subthreshold and above threshold current levels. Injection is a critical phenomena for high-precision programming of floating-gate devices, and accurate modeling fuels continued improvement of programming techniques. Previous work has shown good modeling for subthreshold operation; in this work we extend the modeling throughout the region, enabling improved programming algorithms for floating-gate switch elements, resistors, and high-performance circuit elements. We discuss the implementation of this model in CADENCE'S version of SPICE. © 2007 IEEE.

Bibliographic Note

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