Abnormal Current-Voltage Hysteresis Induced by Reverse Bias in Organic-Inorganic Hybrid Perovskite Photovoltaics

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Original languageEnglish
Pages (from-to)995-1003
Journal / PublicationJournal of Physical Chemistry Letters
Issue number6
Publication statusPublished - 17 Mar 2016
Externally publishedYes


In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH3NH3PbI3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH3NH3PbI3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiOx/CH3NH3PbI3 interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH3NH3PbI3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Furthermore, this work shows that RB can alter how CH3NH3PbI3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.

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