A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

Lung-Hsing Hsu; Shun-Chieh Hsu; Hsin-Ying Lee; Yu-Lin Tsai; Da-Wei Lin; Hao-Chung Kuo; Yi-Chia Hwang; Yin-Han Chen; Jr-Hau He; Yuh-Jen Cheng; Shih-Yen Lin; Chien-Chung Lin

doi:10.1364/CLEO_SI.2015.SF1G.7

A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

Lung-Hsing Hsu, Shun-Chieh Hsu, Hsin-Ying Lee, Yu-Lin Tsai, Da-Wei Lin, Hao-Chung Kuo, Yi-Chia Hwang, Yin-Han Chen, Jr-Hau He, Yuh-Jen Cheng, Shih-Yen Lin, Chien-Chung Lin^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%. © OSA 2015.

Original language	English
Title of host publication	CLEO: 2015
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557529688
DOIs	https://doi.org/10.1364/CLEO_SI.2015.SF1G.7
Publication status	Published - May 2015
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO 2015) - San Jose, United States Duration: 10 May 2015 → 15 May 2015

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO 2015)
Country/Territory	United States
City	San Jose
Period	10/05/15 → 15/05/15

Research Keywords

Photodetectors
Semiconductor materials
Infrared

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10.1364/CLEO_SI.2015.SF1G.7

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@inproceedings{c91b2e97b46f424d8fcc22697018eb13,

title = "A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response",

abstract = "An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%. {\textcopyright} OSA 2015.",

keywords = "Photodetectors, Semiconductor materials, Infrared",

author = "Lung-Hsing Hsu and Shun-Chieh Hsu and Hsin-Ying Lee and Yu-Lin Tsai and Da-Wei Lin and Hao-Chung Kuo and Yi-Chia Hwang and Yin-Han Chen and Jr-Hau He and Yuh-Jen Cheng and Shih-Yen Lin and Chien-Chung Lin",

year = "2015",

month = may,

doi = "10.1364/CLEO_SI.2015.SF1G.7",

language = "English",

isbn = "9781557529688",

booktitle = "CLEO: 2015",

publisher = "Optical Society of America (OSA)",

note = "Conference on Lasers and Electro-Optics (CLEO 2015) ; Conference date: 10-05-2015 Through 15-05-2015",

}

Hsu, L-H, Hsu, S-C, Lee, H-Y, Tsai, Y-L, Lin, D-W, Kuo, H-C, Hwang, Y-C, Chen, Y-H, He, J-H, Cheng, Y-J, Lin, S-Y & Lin, C-C 2015, A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response. in CLEO: 2015., SF1G.7, Optical Society of America (OSA), Conference on Lasers and Electro-Optics (CLEO 2015), San Jose, California, United States, 10/05/15. https://doi.org/10.1364/CLEO_SI.2015.SF1G.7

TY - GEN

T1 - A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

AU - Hsu, Lung-Hsing

AU - Hsu, Shun-Chieh

AU - Lee, Hsin-Ying

AU - Tsai, Yu-Lin

AU - Lin, Da-Wei

AU - Kuo, Hao-Chung

AU - Hwang, Yi-Chia

AU - Chen, Yin-Han

AU - He, Jr-Hau

AU - Cheng, Yuh-Jen

AU - Lin, Shih-Yen

AU - Lin, Chien-Chung

PY - 2015/5

Y1 - 2015/5

N2 - An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%. © OSA 2015.

AB - An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%. © OSA 2015.

KW - Photodetectors

KW - Semiconductor materials

KW - Infrared

UR - http://www.scopus.com/inward/record.url?scp=84935443921&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84935443921&origin=recordpage

U2 - 10.1364/CLEO_SI.2015.SF1G.7

DO - 10.1364/CLEO_SI.2015.SF1G.7

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781557529688

BT - CLEO: 2015

PB - Optical Society of America (OSA)

T2 - Conference on Lasers and Electro-Optics (CLEO 2015)

Y2 - 10 May 2015 through 15 May 2015

ER -

A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

Abstract

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Research Keywords

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