Abstract
An impedance bandwidth enhancement technique for tuning a low noise amplifier (LNA) is presented. With the use of the compact microstrip resonant cell (CMRC) at the emitter pins of a bipolar junction transistor (BJT), the impedance bandwidth achieved is about 95%, for a simple single stage amplifier design. The LNA attains a gain of about 15 dB; also a low noise figure of 1.16 dB at 2.1 GHz and an average noise figure of about 1.5 dB across the operation bands have been achieved. © 2005 IEEE.
| Original language | English |
|---|---|
| Pages (from-to) | 315-317 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 15 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 2005 |
Research Keywords
- Low-noise amplifier (LNA)
- Microwave amplifiers
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