A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong; Yang Yang

doi:10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong
, Yang Yang

State Key Laboratory of Terahertz and Millimeter Waves (City University of Hong Kong)

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

Original language	English
Title of host publication	Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Publisher	IEEE
Pages	913-915
ISBN (Print)	9781467398114
DOIs	https://doi.org/10.1109/ICEAA.2016.7731551
Publication status	Published - 2 Nov 2016
Event	18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 - Cairns, Australia Duration: 19 Sept 2016 → 23 Sept 2016

Conference

Conference	18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Place	Australia
City	Cairns
Period	19/09/16 → 23/09/16

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10.1109/ICEAA.2016.7731551

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@inproceedings{447ba25ac0d740b1b3131bb6dbba919e,

title = "A wideband integrated marchand balun in silicon technology for millimeter-wave applications",

abstract = "This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.",

author = "Yi Zhong and Yang Yang",

year = "2016",

month = nov,

day = "2",

doi = "10.1109/ICEAA.2016.7731551",

language = "English",

isbn = "9781467398114",

pages = "913--915",

booktitle = "Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016",

publisher = "IEEE",

address = "United States",

note = "18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 ; Conference date: 19-09-2016 Through 23-09-2016",

}

Zhong, Y & Yang, Y 2016, A wideband integrated marchand balun in silicon technology for millimeter-wave applications. in Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016., 7731551, IEEE, pp. 913-915, 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016, Cairns, Australia, 19/09/16. https://doi.org/10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications. / Zhong, Yi; Yang, Yang.
Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016. IEEE, 2016. p. 913-915 7731551.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A wideband integrated marchand balun in silicon technology for millimeter-wave applications

AU - Zhong, Yi

AU - Yang, Yang

PY - 2016/11/2

Y1 - 2016/11/2

N2 - This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

AB - This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

UR - https://www.scopus.com/pages/publications/85007410351

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85007410351&origin=recordpage

U2 - 10.1109/ICEAA.2016.7731551

DO - 10.1109/ICEAA.2016.7731551

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781467398114

SP - 913

EP - 915

BT - Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016

PB - IEEE

T2 - 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016

Y2 - 19 September 2016 through 23 September 2016

ER -

A wideband integrated marchand balun in silicon technology for millimeter-wave applications

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