A wideband high efficiency V-band 65nm CMOS power amplifier with neutralization and harmonic controlling
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 20171110 |
| Pages (from-to) | 1-6 |
| Journal / Publication | IEICE Electronics Express |
| Volume | 14 |
| Issue number | 24 |
| Online published | 4 Dec 2017 |
| Publication status | Published - Dec 2017 |
Link(s)
Abstract
A wideband high-efficiency V-band CMOS power amplifier (PA) is proposed in this paper. Neutralization technique is used to reduce the Miller effect and improve the power gain. A wideband on-chip transformer is used to adjust the transistors’ voltage waveform to improve the PAE performance. The PA works from 51 GHz to 64 GHz with 13 GHz absolute bandwidth and 22.6% relative bandwidth. The output power reaches 14.9dBm with 16.3% peak PAE. The circuit is designed in a 65 nm CMOS technology.
Research Area(s)
- CMOS, Power amplifier, Transformer
Citation Format(s)
A wideband high efficiency V-band 65nm CMOS power amplifier with neutralization and harmonic controlling. / Chen, Dong; Jiang, Zhengdong; Zhao, Chenxi et al.
In: IEICE Electronics Express, Vol. 14, No. 24, 20171110, 12.2017, p. 1-6.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
