A valley and spin filter based on gapped graphene

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Jing Wang
  • Mengqiu Long
  • Wen-Sheng Zhao
  • Yue Hu
  • Gaofeng Wang

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number285302
Journal / PublicationJournal of Physics Condensed Matter
Volume28
Issue number28
Publication statusPublished - 27 May 2016

Abstract

We study highly valley- and spin-polarized current in single-layer gapped graphene without spin-orbit coupling. The structure considered is a three-barrier structure with one spin-splitting barrier and two electrical potential barriers with vector potentials. The electrons in the two valleys transmit differently because of the valley-dependent reflection between two adjacent barriers, while the spin-up and spin-down electrons transmit differently because of the spin splitting. The structure is different from other structures in which spin-orbit coupling plays an important role in the observation of valley- and spin-polarized current. We can control the spin and valley polarization by changing the width of the barrier or the strength of the spin splitting. The structure proposed in this paper can be used to make valley and spin devices.

Research Area(s)

  • Gapped graphene, Spin fitering, Valley fitering

Citation Format(s)

A valley and spin filter based on gapped graphene. / Wang, Jing; Long, Mengqiu; Zhao, Wen-Sheng; Hu, Yue; Wang, Gaofeng; Chan, K. S.

In: Journal of Physics Condensed Matter, Vol. 28, No. 28, 285302, 27.05.2016.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal