A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS

Dong Chen; Chenxi Zhao; Shum Kam Man; Quan Xue; Kai Kang

doi:10.1109/ICMMT.2016.7761675

A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS

Dong Chen^*, Chenxi Zhao, Shum Kam Man, Quan Xue, Kai Kang

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

5 Citations (Scopus)

Abstract

This paper presents a differential inverse class F power amplifier working in the 60GHz ISM band. Neutralized differential stacked structure is used in the power amplifier to get enough power gain and inverse isolation. The output harmonic waves are controlled by using the transformer and resonance branch to improve the peak power added efficiency (PAE). The proposed power amplifier achieves a maximum output power of 14.9dBm with a peak PAE of 16.3%. The power amplifier is fabricated using a standard 65nm CMOS technology.

Original language	English
Title of host publication	9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings
Publisher	IEEE
Pages	55-57
Volume	1
ISBN (Print)	9781467389815
DOIs	https://doi.org/10.1109/ICMMT.2016.7761675
Publication status	Published - 28 Nov 2016
Event	9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016) - Beijing, China Duration: 5 Jun 2016 → 8 Jun 2016

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Volume	1

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Conference	9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016)
Abbreviated title	ICMMT 2016
Country/Territory	China
City	Beijing
Period	5/06/16 → 8/06/16

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@inproceedings{7fcb9c9fc7694ada857ec25eeafd0bd5,

title = "A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS",

abstract = "This paper presents a differential inverse class F power amplifier working in the 60GHz ISM band. Neutralized differential stacked structure is used in the power amplifier to get enough power gain and inverse isolation. The output harmonic waves are controlled by using the transformer and resonance branch to improve the peak power added efficiency (PAE). The proposed power amplifier achieves a maximum output power of 14.9dBm with a peak PAE of 16.3%. The power amplifier is fabricated using a standard 65nm CMOS technology.",

author = "Dong Chen and Chenxi Zhao and Man, {Shum Kam} and Quan Xue and Kai Kang",

year = "2016",

month = nov,

day = "28",

doi = "10.1109/ICMMT.2016.7761675",

language = "English",

isbn = "9781467389815",

volume = "1",

publisher = "IEEE",

pages = "55--57",

booktitle = "9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings",

address = "United States",

note = "9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016), ICMMT 2016 ; Conference date: 05-06-2016 Through 08-06-2016",

}

Chen, D, Zhao, C, Man, SK, Xue, Q & Kang, K 2016, A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS. in 9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings. vol. 1, 7761675, IEEE, pp. 55-57, 9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016), Beijing, China, 5/06/16. https://doi.org/10.1109/ICMMT.2016.7761675

A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS. / Chen, Dong; Zhao, Chenxi; Man, Shum Kam et al.
9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings. Vol. 1 IEEE, 2016. p. 55-57 7761675.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS

AU - Chen, Dong

AU - Zhao, Chenxi

AU - Man, Shum Kam

AU - Xue, Quan

AU - Kang, Kai

PY - 2016/11/28

Y1 - 2016/11/28

N2 - This paper presents a differential inverse class F power amplifier working in the 60GHz ISM band. Neutralized differential stacked structure is used in the power amplifier to get enough power gain and inverse isolation. The output harmonic waves are controlled by using the transformer and resonance branch to improve the peak power added efficiency (PAE). The proposed power amplifier achieves a maximum output power of 14.9dBm with a peak PAE of 16.3%. The power amplifier is fabricated using a standard 65nm CMOS technology.

AB - This paper presents a differential inverse class F power amplifier working in the 60GHz ISM band. Neutralized differential stacked structure is used in the power amplifier to get enough power gain and inverse isolation. The output harmonic waves are controlled by using the transformer and resonance branch to improve the peak power added efficiency (PAE). The proposed power amplifier achieves a maximum output power of 14.9dBm with a peak PAE of 16.3%. The power amplifier is fabricated using a standard 65nm CMOS technology.

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DO - 10.1109/ICMMT.2016.7761675

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781467389815

VL - 1

SP - 55

EP - 57

BT - 9th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2016 - Proceedings

PB - IEEE

T2 - 9th International Conference on Microwave and Millimeter Wave Technology (ICMMT 2016)

Y2 - 5 June 2016 through 8 June 2016

ER -

A V-band inverse class F power amplifier with 16.3% PAE in 65nm CMOS

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