A universal method for rapid and large‐scale growth of layered crystals

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

36 Scopus Citations
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Author(s)

  • Apoorva Chaturvedi
  • Bo Chen
  • Keke Zhang
  • Gwang‐Hyeon Nam
  • Lu You
  • Zhuangchai Lai
  • Thu Ha Tran
  • Guigao Liu
  • Jiadong Zhou
  • Zheng Liu
  • Junling Wang
  • Edwin H. T. Teo

Detail(s)

Original languageEnglish
Article numbere1011
Journal / PublicationSmartMat
Volume1
Issue number1
Online published25 Nov 2020
Publication statusPublished - Dec 2020

Link(s)

Abstract

Layered van der Waals (vdW) materials, consisting of atomically thin layers, are of paramount importance in physics, chemistry, and materials science owing to their unique properties and various promising applications. However, their fast and large-scale growth via a general approach is still a big challenge, severely limiting their practical implementations. Here, we report a universal method for rapid (~60 min) and large-scale (gram scale) growth of phase-pure, high-crystalline layered vdW materials from their elementary powders via microwave plasma heating in sealed ampoules. This method can be used for growth of 30 compounds with different components (binary, ternary, and quaternary) and properties. The ferroelectric and transport properties of mechanically exfoliated flakes validate the high crystal quality of the grown materials. Our study provides a general strategy for the fast and large-scale growth of layered vdW materials with appealing physiochemical properties, which could be used for various promising applications.

Research Area(s)

  • 2D materials, ferroelectric, fieldeffect transistor, layered compounds, universal method

Citation Format(s)

A universal method for rapid and large‐scale growth of layered crystals. / Chaturvedi, Apoorva; Chen, Bo; Zhang, Keke et al.
In: SmartMat, Vol. 1, No. 1, e1011, 12.2020.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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