A three-dimensional numerical simulation model of magnetron sputtering target

In order to reduce the producing costs, optimization of magnetron sputtering target is not only about increasing target utilization efficiency, but also about increasing power efficiency. Thus numerical simulation results about these two factors are necessary. For that reason, a 3D numerical simulation model based on an existing structure is built. Information about target utilization efficiency and power efficiency can be obtained by simulation results of plasma behavior in magnetron discharge. Analysis of ion trajectories, energy and incident angle distribution indicates that sputtering ion proportion decreases from 80% to 67% with the discharge voltage increasing from 260V to 340V, and excessively high discharge voltage is not beneficial to increase power efficiency. On the other hand, increasing discharge voltage facilitates ions to impact target with higher mean kinetic energy, which is beneficial to increase sputtering yield. Therefore, choosing a proper discharge voltage according to working pressure is an effective way to increase power efficiency. Since the reliability of simulation model is verified by comparison of ion sputtering position distribution and target actual erosion profile, simulation and analyzing methods in this paper are useful for optimization design of magnetron sputtering target.