TY - GEN
T1 - A temperature dependent empirical model for AlGaN/GaN HEMTs including charge trapping and self-heating effects
AU - Huang, Andong
AU - Zhong, Zheng
AU - Guo, Yongxin
AU - Wu, Wen
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2017/10/4
Y1 - 2017/10/4
N2 - This paper presents a temperature dependent empirical model for GaN HEMTs with the consideration of charge trapping and self-heating effects. A new 13-element drain current source (Ids) model is proposed. The current dispersion deduced by trapping and thermal effects is generally modeled by Taylor expansion, and for the first time, the dispersion related coefficients are rigorously derived to be the combination of analytical Ids functions. The Ids model is manifested by the accurate prediction of massive measured PIVs with various quiescent biases and power dissipation. The large signal model is implemented in Advanced Design System (ADS), and the simulations of both DC and RF characteristics well agree with the measurements. © 2017 IEEE.
AB - This paper presents a temperature dependent empirical model for GaN HEMTs with the consideration of charge trapping and self-heating effects. A new 13-element drain current source (Ids) model is proposed. The current dispersion deduced by trapping and thermal effects is generally modeled by Taylor expansion, and for the first time, the dispersion related coefficients are rigorously derived to be the combination of analytical Ids functions. The Ids model is manifested by the accurate prediction of massive measured PIVs with various quiescent biases and power dissipation. The large signal model is implemented in Advanced Design System (ADS), and the simulations of both DC and RF characteristics well agree with the measurements. © 2017 IEEE.
KW - Bulk trapping
KW - Current dispersion
KW - Electro-thermal
KW - Empirical model
KW - GaN HEMTs
KW - Surface trapping
UR - http://www.scopus.com/inward/record.url?scp=85032511079&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85032511079&origin=recordpage
U2 - 10.1109/MWSYM.2017.8059087
DO - 10.1109/MWSYM.2017.8059087
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781509063604
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 248
EP - 251
BT - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017
PB - IEEE
T2 - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Y2 - 4 June 2017 through 9 June 2017
ER -