TY - GEN
T1 - A technology-independent table-based model for advanced GaN Schottky barrier diodes
AU - Zhong, Zheng
AU - Guo, Yong-Xin
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2012
Y1 - 2012
N2 - In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained. © 2012 IEEE.
AB - In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained. © 2012 IEEE.
UR - https://www.scopus.com/pages/publications/84873172574
UR - https://www.scopus.com/pages/publications/84873172574#tab=impact
U2 - 10.1109/RFIT.2012.6401649
DO - 10.1109/RFIT.2012.6401649
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781467323048
T3 - Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
SP - 168
EP - 170
BT - Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
T2 - 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
Y2 - 21 November 2012 through 23 November 2012
ER -