A study on electric properties for pulse laser annealing of ITO film after wet etching

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • C. J. Lee
  • H. K. Lin
  • C. H. Li
  • L. X. Chen
  • C. C. Lee
  • C. W. Wu

Detail(s)

Original languageEnglish
Pages (from-to)330-335
Journal / PublicationThin Solid Films
Volume522
Online published12 Sep 2012
Publication statusPublished - 1 Nov 2012
Externally publishedYes

Abstract

The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure.

Research Area(s)

  • Annealing, Crystallization, Indium tin oxide, Nanosecond pulse laser, Wet etching

Citation Format(s)

A study on electric properties for pulse laser annealing of ITO film after wet etching. / Lee, C. J.; Lin, H. K.; Li, C. H.; Chen, L. X.; Lee, C. C.; Wu, C. W.; Huang, J. C.

In: Thin Solid Films, Vol. 522, 01.11.2012, p. 330-335.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal