A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Research Output
- 2019
- Published
Erratum: A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications (Journal of Applied Physics (2019) 125 (082520) DOI: 10.1063/1.5052718)
Li, S., Chou, J., Zhang, H., Lu, Y. & Hu, A., 7 Nov 2019, In: Journal of Applied Physics. 126, 17, 179901.Research output: Journal Publications and Reviews › Erratum
