A study of high-temperature implantation of 72 keV copper ions into nickel

Wen-Fa Tsai; J. H. Liang; J. J. Kai; G. L. Kulcinski

doi:10.1016/j.nimb.2004.10.038

A study of high-temperature implantation of 72 keV copper ions into nickel

Wen-Fa Tsai, J. H. Liang, J. J. Kai, G. L. Kulcinski

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

The depth profiles of 72 keV Cu ions (5 × 10 ¹⁵ Cu ^-1 ions/cm ²) implanted into Ni at elevated temperatures (200, 400 and 500 °C) are investigated theoretically and experimentally. A tandem accelerator was used for implantation and the depth profiles were measured by SIMS. The theoretical depth profiles were calculated by a kinetic model which takes into account ion collection, lattice dilation, preferential sputtering, radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS). The results demonstrated that our theoretical predictions are in good agreement qualitatively with measured ones, and the implantation temperatures have a significant effect on the final depth profiles of implanted ions. The effect is mainly due to RED and RIS, which are attributed to the point defects generated during ion implantation. © 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	151-155
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	228
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2004.10.038
Publication status	Published - Jan 2005
Externally published	Yes

Research Keywords

Accelerator
Ion implantation
Point defects
Radiation effects

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@article{0c8b4e73b8214a1584f4e1edbf5296b9,

title = "A study of high-temperature implantation of 72 keV copper ions into nickel",

abstract = "The depth profiles of 72 keV Cu ions (5 × 10 15 Cu -1 ions/cm 2) implanted into Ni at elevated temperatures (200, 400 and 500 °C) are investigated theoretically and experimentally. A tandem accelerator was used for implantation and the depth profiles were measured by SIMS. The theoretical depth profiles were calculated by a kinetic model which takes into account ion collection, lattice dilation, preferential sputtering, radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS). The results demonstrated that our theoretical predictions are in good agreement qualitatively with measured ones, and the implantation temperatures have a significant effect on the final depth profiles of implanted ions. The effect is mainly due to RED and RIS, which are attributed to the point defects generated during ion implantation. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

keywords = "Accelerator, Ion implantation, Point defects, Radiation effects",

author = "Wen-Fa Tsai and Liang, {J. H.} and Kai, {J. J.} and Kulcinski, {G. L.}",

year = "2005",

month = jan,

doi = "10.1016/j.nimb.2004.10.038",

language = "English",

volume = "228",

pages = "151--155",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4 SPEC. ISS.",

}

A study of high-temperature implantation of 72 keV copper ions into nickel. / Tsai, Wen-Fa; Liang, J. H.; Kai, J. J. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 228, No. 1-4 SPEC. ISS., 01.2005, p. 151-155.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - A study of high-temperature implantation of 72 keV copper ions into nickel

AU - Tsai, Wen-Fa

AU - Liang, J. H.

AU - Kai, J. J.

AU - Kulcinski, G. L.

PY - 2005/1

Y1 - 2005/1

N2 - The depth profiles of 72 keV Cu ions (5 × 10 15 Cu -1 ions/cm 2) implanted into Ni at elevated temperatures (200, 400 and 500 °C) are investigated theoretically and experimentally. A tandem accelerator was used for implantation and the depth profiles were measured by SIMS. The theoretical depth profiles were calculated by a kinetic model which takes into account ion collection, lattice dilation, preferential sputtering, radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS). The results demonstrated that our theoretical predictions are in good agreement qualitatively with measured ones, and the implantation temperatures have a significant effect on the final depth profiles of implanted ions. The effect is mainly due to RED and RIS, which are attributed to the point defects generated during ion implantation. © 2004 Elsevier B.V. All rights reserved.

AB - The depth profiles of 72 keV Cu ions (5 × 10 15 Cu -1 ions/cm 2) implanted into Ni at elevated temperatures (200, 400 and 500 °C) are investigated theoretically and experimentally. A tandem accelerator was used for implantation and the depth profiles were measured by SIMS. The theoretical depth profiles were calculated by a kinetic model which takes into account ion collection, lattice dilation, preferential sputtering, radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS). The results demonstrated that our theoretical predictions are in good agreement qualitatively with measured ones, and the implantation temperatures have a significant effect on the final depth profiles of implanted ions. The effect is mainly due to RED and RIS, which are attributed to the point defects generated during ion implantation. © 2004 Elsevier B.V. All rights reserved.

KW - Accelerator

KW - Ion implantation

KW - Point defects

KW - Radiation effects

UR - http://www.scopus.com/inward/record.url?scp=11344249942&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-11344249942&origin=recordpage

U2 - 10.1016/j.nimb.2004.10.038

DO - 10.1016/j.nimb.2004.10.038

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 228

SP - 151

EP - 155

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4 SPEC. ISS.

ER -

A study of high-temperature implantation of 72 keV copper ions into nickel

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Research Keywords

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