Abstract
A simple method based on the thermal oxidation of Si wafers has been discovered to provide a large-scale synthesis of very long, aligned silica nanowires. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence. The obtained SiO2 nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of ∼50 nm. The PL spectra of the SiO2 nanowires showed a strong and stable green emission at 540 nm. The nucleation and growth of the SiO2 nanowires were investigated. © 2002 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 339-343 |
| Journal | Chemical Physics Letters |
| Volume | 367 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 6 Jan 2003 |
Fingerprint
Dive into the research topics of 'A simple large-scale synthesis of very long aligned silica nanowires'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver