A simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couples

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

12 Scopus Citations
View graph of relations



Original languageEnglish
Pages (from-to)8759-8764
Journal / PublicationJournal of Applied Physics
Issue number12
Publication statusPublished - 1982
Externally publishedYes


A simple analysis of marker motion in a single compound layer is presented. The compound layer may either act as a transport layer with invariant thickness, as in the case of solid-phase epitaxial growth of amorphous silicon through a thin-film Pd2Si layer on crystalline silicon, or the compound layer may grow itself as in a planar binary diffusion couple. The analysis takes into account possibe volume changes during compound formation and holds for interface-controlled as well as for diffusion-controlled growth of the compound layer. Reanalysis of marker motion data in Ni2Si in Ni/Si thin-film diffusion couple shows that the ratio DNi/D Si of the diffusivities of Ni (DNi) and Si (D Si) in Ni2Si at 325°C is at least about ten times larger than that evaluated previously. Marker motion data for the growth of Cu6Sn5 at room temperature in a bimetallic Cu/Sn thin-film diffusion couple are presented and analyzed.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.