A silicon-nanowire memory driven by optical gradient force induced bistability

B. Dong; H. Cai; L. K. Chin; J. G. Huang; Z. C. Yang; Y. D. Gu; G. I. Ng; W. Ser; D. L. Kwong; A. Q. Liu

doi:10.1063/1.4939114

A silicon-nanowire memory driven by optical gradient force induced bistability

B. Dong, H. Cai, L. K. Chin, J. G. Huang, Z. C. Yang, Y. D. Gu, G. I. Ng, W. Ser, D. L. Kwong, A. Q. Liu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states ("0" and "1") and can be set/reset by modulating the light intensity (<3mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

Original language	English
Article number	261111
Journal	Applied Physics Letters
Volume	107
Issue number	26
DOIs	https://doi.org/10.1063/1.4939114
Publication status	Published - 28 Dec 2015
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "A silicon-nanowire memory driven by optical gradient force induced bistability",

abstract = "In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states ({"}0{"} and {"}1{"}) and can be set/reset by modulating the light intensity (<3mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.",

author = "B. Dong and H. Cai and Chin, {L. K.} and Huang, {J. G.} and Yang, {Z. C.} and Gu, {Y. D.} and Ng, {G. I.} and W. Ser and Kwong, {D. L.} and Liu, {A. Q.}",

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journal = "Applied Physics Letters",

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T1 - A silicon-nanowire memory driven by optical gradient force induced bistability

AU - Dong, B.

AU - Cai, H.

AU - Chin, L. K.

AU - Huang, J. G.

AU - Yang, Z. C.

AU - Gu, Y. D.

AU - Ng, G. I.

AU - Ser, W.

AU - Kwong, D. L.

AU - Liu, A. Q.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2015/12/28

Y1 - 2015/12/28

N2 - In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states ("0" and "1") and can be set/reset by modulating the light intensity (<3mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

AB - In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states ("0" and "1") and can be set/reset by modulating the light intensity (<3mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

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DO - 10.1063/1.4939114

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261111

ER -

A silicon-nanowire memory driven by optical gradient force induced bistability

Abstract

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